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  • image of 阵列双极性结型晶体管>BCM856BSF
  • image of 阵列双极性结型晶体管>BCM856BSF
BCM856BSF
BCM856BSF datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Nexperia USA Inc. stock available at Utmel
BCM856BSF
Arrays BJT Transistors
Nexperia USA Inc.
BCM856BSF datas
-
6-TSSOP, SC-88, SOT-363
YES
image of 阵列双极性结型晶体管>BCM856BSF
image of 阵列双极性结型晶体管>BCM856BSF
BCM856BSF
Arrays BJT Transistors
Nexperia USA Inc.
BCM856BSF datas
-
6-TSSOP, SC-88, SOT-363
NO
TYPEDESCRIPTION
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Part Status Active
Number of Terminations 6
Terminal Form GULL WING
Pin Count 6
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PDSO-G6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS
Power - Max 200mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type 2 PNP (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 65V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 175MHz
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
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