+86-13723477211
  • image of 阵列双极性结型晶体管>PBSS5160PAPSX
  • image of 阵列双极性结型晶体管>PBSS5160PAPSX
PBSS5160PAPSX
PBSS5160PAPSX datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Nexperia USA Inc. stock available at Utmel
PBSS5160PAPSX
Arrays BJT Transistors
Nexperia USA Inc.
PBSS5160PAPSX d
-
6-UDFN Exposed Pad
YES
: 0.49

1

0.49

0.49

10

0.462264

4.62264

100

0.436098

43.6098

500

0.411413

205.7065

1000

0.388126

388.126

image of 阵列双极性结型晶体管>PBSS5160PAPSX
image of 阵列双极性结型晶体管>PBSS5160PAPSX
PBSS5160PAPSX
Arrays BJT Transistors
Nexperia USA Inc.
PBSS5160PAPSX d
-
6-UDFN Exposed Pad
NO
TYPEDESCRIPTION
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Max Power Dissipation 370mW
Terminal Form NO LEAD
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code S-PDSO-N6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS
Case Connection COLLECTOR
Power - Max 370mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 550mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 550mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 125MHz
Max Breakdown Voltage 60V
Frequency - Transition 125MHz
RoHS Status ROHS3 Compliant
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price


captcha

+86-13723477211

sales@fuchaoic.com
0