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  • image of 阵列双极性结型晶体管>PHPT610030PKX
  • image of 阵列双极性结型晶体管>PHPT610030PKX
PHPT610030PKX
PHPT610030PKX datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Nexperia USA Inc. stock available at Utmel
PHPT610030PKX
Arrays BJT Transistors
Nexperia USA Inc.
PHPT610030PKX d
-
SOT-1205, 8-LFPAK56
YES
: 0.67968

1

0.67968

0.67968

10

0.641208

6.41208

100

0.604913

60.4913

500

0.570672

285.336

1000

0.53837

538.37

image of 阵列双极性结型晶体管>PHPT610030PKX
image of 阵列双极性结型晶体管>PHPT610030PKX
PHPT610030PKX
Arrays BJT Transistors
Nexperia USA Inc.
PHPT610030PKX d
-
SOT-1205, 8-LFPAK56
NO
TYPEDESCRIPTION
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-1205, 8-LFPAK56
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Max Power Dissipation 1.25W
Terminal Form GULL WING
Pin Count 8
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PDSO-G6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS
Case Connection COLLECTOR
Power - Max 1.25W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 360mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 360mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 125MHz
Max Breakdown Voltage 100V
Frequency - Transition 125MHz
RoHS Status ROHS3 Compliant
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