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  • image of 双极性结型晶体管阵列>EMH10FHAT2R
  • image of 双极性结型晶体管阵列>EMH10FHAT2R
EMH10FHAT2R
EMH10FHAT2R datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ROHM Semiconductor stock available at Utmel
EMH10FHAT2R
BJT Transistors Arrays
ROHM Semiconductor
EMH10FHAT2R dat
-
SOT-563, SOT-666
YES
: 0.282

1

0.282

0.282

10

0.266038

2.66038

100

0.250979

25.0979

500

0.236773

118.3865

1000

0.22337

223.37

image of 双极性结型晶体管阵列>EMH10FHAT2R
image of 双极性结型晶体管阵列>EMH10FHAT2R
EMH10FHAT2R
BJT Transistors Arrays
ROHM Semiconductor
EMH10FHAT2R dat
-
SOT-563, SOT-666
NO
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series Automotive, AEC-Q101
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 21
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 150mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector (Ic) (Max) 100mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
Resistor - Base (R1) 2.2k Ω
Resistor - Emitter Base (R2) 47k Ω
Collector-Emitter Voltage-Max 50V
RoHS Status ROHS3 Compliant
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