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  • image of 双极性结型晶体管阵列>PQMH13Z
  • image of 双极性结型晶体管阵列>PQMH13Z
PQMH13Z
PQMH13Z datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Nexperia USA Inc. stock available at Utmel
PQMH13Z
BJT Transistors Arrays
Nexperia USA Inc.
PQMH13Z datashe
-
6-XFDFN Exposed Pad
YES
: 0.110452

1

0.110452

0.110452

10

0.1042

1.042

100

0.098302

9.8302

500

0.092738

46.369

1000

0.087488

87.488

image of 双极性结型晶体管阵列>PQMH13Z
image of 双极性结型晶体管阵列>PQMH13Z
PQMH13Z
BJT Transistors Arrays
Nexperia USA Inc.
PQMH13Z datashe
-
6-XFDFN Exposed Pad
NO
TYPEDESCRIPTION
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 10
Max Power Dissipation 230mW
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PDSO-N6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Case Connection COLLECTOR
Power - Max 230mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 100mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 230MHz
Frequency - Transition 230MHz
Resistor - Base (R1) 4.7k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status ROHS3 Compliant
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