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  • image of 双极性结型晶体管阵列>PUMB1,135
  • image of 双极性结型晶体管阵列>PUMB1,135
PUMB1,135
PUMB1,135 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Nexperia USA Inc. stock available at Utmel
PUMB1,135
BJT Transistors Arrays
Nexperia USA Inc.
PUMB1,135 datas
-
6-TSSOP, SC-88, SOT-363
YES
: 0.28

1

0.28

0.28

10

0.264151

2.64151

100

0.249199

24.9199

500

0.235093

117.5465

1000

0.221786

221.786

image of 双极性结型晶体管阵列>PUMB1,135
image of 双极性结型晶体管阵列>PUMB1,135
PUMB1,135
BJT Transistors Arrays
Nexperia USA Inc.
PUMB1,135 datas
-
6-TSSOP, SC-88, SOT-363
NO
TYPEDESCRIPTION
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Max Power Dissipation 300mW
Terminal Form GULL WING
Base Part Number MB1
Pin Count 6
Number of Elements 2
Polarity PNP
Element Configuration Dual
Transistor Application SWITCHING
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 22k Ω
Resistor - Emitter Base (R2) 22k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
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