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  • image of 双极性结型晶体管阵列>RN1962FE(TE85L,F)
  • image of 双极性结型晶体管阵列>RN1962FE(TE85L,F)
RN1962FE(TE85L,F)
RN1962FE(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at Utmel
RN1962FE(TE85L,F)
BJT Transistors Arrays
Toshiba Semiconductor and Storage
RN1962FE(TE85L,
-
SOT-563, SOT-666
YES
: 0.720461

1

0.720461

0.720461

10

0.67968

6.7968

100

0.641208

64.1208

500

0.604913

302.4565

1000

0.570672

570.672

image of 双极性结型晶体管阵列>RN1962FE(TE85L,F)
image of 双极性结型晶体管阵列>RN1962FE(TE85L,F)
RN1962FE(TE85L,F)
BJT Transistors Arrays
Toshiba Semiconductor and Storage
RN1962FE(TE85L,
-
SOT-563, SOT-666
NO
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Reach Compliance Code unknown
Number of Elements 2
Polarity NPN
Element Configuration Dual
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 10V
hFE Min 50
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10k Ω
RoHS Status RoHS Compliant
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