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  • image of 双极性结型晶体管阵列>RN4981,LF(CT
  • image of 双极性结型晶体管阵列>RN4981,LF(CT
RN4981,LF(CT
RN4981,LF(CT datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at Utmel
RN4981,LF(CT
BJT Transistors Arrays
Toshiba Semiconductor and Storage
RN4981,LF(CT da
-
6-TSSOP, SC-88, SOT-363
YES
: 0.418064

1

0.418064

0.418064

10

0.3944

3.944

100

0.372075

37.2075

500

0.351015

175.5075

1000

0.331146

331.146

image of 双极性结型晶体管阵列>RN4981,LF(CT
image of 双极性结型晶体管阵列>RN4981,LF(CT
RN4981,LF(CT
BJT Transistors Arrays
Toshiba Semiconductor and Storage
RN4981,LF(CT da
-
6-TSSOP, SC-88, SOT-363
NO
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Packaging Cut Tape (CT)
Published 2014
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Reach Compliance Code unknown
Power - Max 200mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz 200MHz
Resistor - Base (R1) 4.7k Ω
Resistor - Emitter Base (R2) 4.7k Ω
RoHS Status RoHS Compliant
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