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0912-7
0912-7 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Microsemi Corporation stock available at Utmel
0912-7
RF BJT Transistors
Microsemi Corporation
0912-7 datashee
-
55CX
YES
image of 射频双极性结型晶体管>0912-7
image of 射频双极性结型晶体管>0912-7
0912-7
RF BJT Transistors
Microsemi Corporation
0912-7 datashee
-
55CX
NO
TYPEDESCRIPTION
Contact Plating Tin
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55CX
Number of Pins 55
Supplier Device Package 55CX
Operating Temperature 200°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 50W
Number of Elements 1
Power Dissipation 50W
Power - Max 50W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 100mA 5V
Collector Emitter Breakdown Voltage 60V
Gain 8.5dB
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 960MHz~1.215GHz
Emitter Base Voltage (VEBO) 4V
Radiation Hardening No
RoHS Status RoHS Compliant
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