+86-13723477211
  • image of 射频双极性结型晶体管>JANTXV2N4957
  • image of 射频双极性结型晶体管>JANTXV2N4957
JANTXV2N4957
JANTXV2N4957 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Microsemi Corporation stock available at Utmel
JANTXV2N4957
RF BJT Transistors
Microsemi Corporation
JANTXV2N4957 da
-
TO-72-3 Metal Can
YES
image of 射频双极性结型晶体管>JANTXV2N4957
image of 射频双极性结型晶体管>JANTXV2N4957
JANTXV2N4957
RF BJT Transistors
Microsemi Corporation
JANTXV2N4957 da
-
TO-72-3 Metal Can
NO
TYPEDESCRIPTION
Lifecycle Status IN PRODUCTION (Last Updated: 6 months ago)
Factory Lead Time 23 Weeks
Mounting Type Through Hole
Package / Case TO-72-3 Metal Can
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Reference Standard MIL-19500/426
JESD-30 Code O-MBCY-W4
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Case Connection ISOLATED
Power - Max 200mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 10V
Gain 25dB
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 30mA
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.8pF
Noise Figure (dB Typ @ f) 3.5dB @ 450MHz
RoHS Status Non-RoHS Compliant
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price


captcha

+86-13723477211

sales@fuchaoic.com
0