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  • image of 射频双极性结型晶体管>JANTXV2N4957UB
  • image of 射频双极性结型晶体管>JANTXV2N4957UB
JANTXV2N4957UB
JANTXV2N4957UB datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Microsemi Corporation stock available at Utmel
JANTXV2N4957UB
RF BJT Transistors
Microsemi Corporation
JANTXV2N4957UB
-
3-SMD, No Lead
YES
image of 射频双极性结型晶体管>JANTXV2N4957UB
image of 射频双极性结型晶体管>JANTXV2N4957UB
JANTXV2N4957UB
RF BJT Transistors
Microsemi Corporation
JANTXV2N4957UB
-
3-SMD, No Lead
NO
TYPEDESCRIPTION
Lifecycle Status IN PRODUCTION (Last Updated: 6 months ago)
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
JESD-609 Code e4
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Gold (Au) - with Nickel (Ni) barrier
Additional Feature LOW NOISE
HTS Code 8541.21.00.95
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Reference Standard MIL-19500/426
JESD-30 Code R-CDSO-N3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 200mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 10V
Gain 25dB
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 30mA
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.8pF
Noise Figure (dB Typ @ f) 3.5dB @ 450MHz
RoHS Status Non-RoHS Compliant
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