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  • image of 单个双极性结型晶体管>BD13710STU
  • image of 单个双极性结型晶体管>BD13710STU
BD13710STU
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD13710STU
Single BJT Transistors
ON Semiconductor
NPN 150°C TJ 1
-
TO-225AA, TO-126-3
YES
image of 单个双极性结型晶体管>BD13710STU
image of 单个双极性结型晶体管>BD13710STU
BD13710STU
Single BJT Transistors
ON Semiconductor
NPN 150°C TJ 1
-
TO-225AA, TO-126-3
NO
TYPEDESCRIPTION
Lifecycle Status ACTIVE (Last Updated: 2 months ago)
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 60V
Max Power Dissipation 1.25W
Current Rating 1.5A
Base Part Number BD137
Number of Elements 1
Element Configuration Single
Power Dissipation 1.25W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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