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  • image of 单个双极性结型晶体管>BD240CTU
  • image of 单个双极性结型晶体管>BD240CTU
BD240CTU
PNP 150°C TJ 300μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BD240CTU
Single BJT Transistors
ON Semiconductor
PNP 150°C TJ 3
-
TO-220-3
YES
image of 单个双极性结型晶体管>BD240CTU
image of 单个双极性结型晶体管>BD240CTU
BD240CTU
Single BJT Transistors
ON Semiconductor
PNP 150°C TJ 3
-
TO-220-3
NO
TYPEDESCRIPTION
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Factory Lead Time 36 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC -100V
Max Power Dissipation 30W
Current Rating -2A
Base Part Number BD240
Number of Elements 1
Element Configuration Single
Power Dissipation 30W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 115V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 700mV @ 200mA, 1A
Collector Emitter Breakdown Voltage 150V
Current - Collector (Ic) (Max) 2A
Transition Frequency 4MHz
Collector Emitter Saturation Voltage -700mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) -100V
Emitter Base Voltage (VEBO) -5V
hFE Min 15
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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