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  • image of 单个双极性结型晶体管>KSH112TM
  • image of 单个双极性结型晶体管>KSH112TM
KSH112TM
NPN - Darlington 150°C TJ 20μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH112TM
Single BJT Transistors
ON Semiconductor
NPN - Darlingto
-
TO-252-3, DPak (2 Leads + Tab), SC-63
YES
image of 单个双极性结型晶体管>KSH112TM
image of 单个双极性结型晶体管>KSH112TM
KSH112TM
Single BJT Transistors
ON Semiconductor
NPN - Darlingto
-
TO-252-3, DPak (2 Leads + Tab), SC-63
NO
TYPEDESCRIPTION
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Factory Lead Time 9 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 100V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Current Rating 2A
Base Part Number KSH112
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A 3V
Current - Collector Cutoff (Max) 20μA
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 25MHz
Collector Emitter Saturation Voltage 2V
Max Breakdown Voltage 100V
Frequency - Transition 25MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Height 2.3mm
Length 6.6mm
Width 6.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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