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  • image of 单个双极性结型晶体管>MD2310FX
  • image of 单个双极性结型晶体管>MD2310FX
MD2310FX
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN ISOWATT218FX Tube Through Hole
MD2310FX
Single BJT Transistors
STMicroelectronics
NPN 150°C TJ 2
-
ISOWATT218FX
YES
image of 单个双极性结型晶体管>MD2310FX
image of 单个双极性结型晶体管>MD2310FX
MD2310FX
Single BJT Transistors
STMicroelectronics
NPN 150°C TJ 2
-
ISOWATT218FX
NO
TYPEDESCRIPTION
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOWATT218FX
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 62W
Base Part Number MD2310
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 62W
Case Connection ISOLATED
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 700V
Max Collector Current 14A
DC Current Gain (hFE) (Min) @ Ic, Vce 6 @ 7A 5V
Current - Collector Cutoff (Max) 200μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 1.75A, 7A
Collector Emitter Breakdown Voltage 700V
Max Frequency 64kHz
Collector Emitter Saturation Voltage 2.5V
Collector Base Voltage (VCBO) 1.5kV
Emitter Base Voltage (VEBO) 9V
hFE Min 6
Isolation Voltage 2.5kV
Height 26.7mm
Length 15.7mm
Width 5.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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