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  • image of 单个双极性结型晶体管>MJD210RLG
  • image of 单个双极性结型晶体管>MJD210RLG
MJD210RLG
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD210RLG
Single BJT Transistors
ON Semiconductor
-
TO-252-3, DPak (2 Leads + Tab), SC-63
YES
image of 单个双极性结型晶体管>MJD210RLG
image of 单个双极性结型晶体管>MJD210RLG
MJD210RLG
Single BJT Transistors
ON Semiconductor
-
TO-252-3, DPak (2 Leads + Tab), SC-63
NO
TYPEDESCRIPTION
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated DC -25V
Max Power Dissipation 12.5W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -5A
Frequency 65MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD210
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity PNP, NPN
Element Configuration Single
Power Dissipation 1.4W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 65MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 65MHz
Collector Emitter Saturation Voltage 1.8V
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 8V
hFE Min 70
Height 2.38mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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