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  • image of 单个双极性结型晶体管>SMMBTA06WT1G
  • image of 单个双极性结型晶体管>SMMBTA06WT1G
SMMBTA06WT1G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
SMMBTA06WT1G
Single BJT Transistors
ON Semiconductor
-
SC-70, SOT-323
YES
image of 单个双极性结型晶体管>SMMBTA06WT1G
image of 单个双极性结型晶体管>SMMBTA06WT1G
SMMBTA06WT1G
Single BJT Transistors
ON Semiconductor
-
SC-70, SOT-323
NO
TYPEDESCRIPTION
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3
Weight 6.208546mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number MMBTA06
Pin Count 3
Reference Standard AEC-Q101
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 250mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 4V
hFE Min 100
Continuous Collector Current 500mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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