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  • image of 单个双极性结型晶体管>SMMBTA92LT3G
  • image of 单个双极性结型晶体管>SMMBTA92LT3G
SMMBTA92LT3G
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SMMBTA92LT3G
Single BJT Transistors
ON Semiconductor
-
TO-236-3, SC-59, SOT-23-3
YES
image of 单个双极性结型晶体管>SMMBTA92LT3G
image of 单个双极性结型晶体管>SMMBTA92LT3G
SMMBTA92LT3G
Single BJT Transistors
ON Semiconductor
-
TO-236-3, SC-59, SOT-23-3
NO
TYPEDESCRIPTION
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 11 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number MMBTA92
Pin Count 3
Reference Standard AEC-Q101
Number of Elements 1
Element Configuration Single
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA 10V
Current - Collector Cutoff (Max) 250nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Max Frequency 100MHz
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -500mV
Frequency - Transition 50MHz
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) -5V
Height 1.11mm
Length 3.04mm
Width 2.64mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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