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  • image of 预偏置双极性结型晶体管>DTA043ZEBTL
  • image of 预偏置双极性结型晶体管>DTA043ZEBTL
DTA043ZEBTL
DTA043ZEBTL datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ROHM Semiconductor stock available at Utmel
DTA043ZEBTL
Pre-Biased BJT Transistors
ROHM Semiconductor
DTA043ZEBTL dat
-
SC-89, SOT-490
YES
: 0.191846

1

0.191846

0.191846

10

0.180987

1.80987

100

0.170742

17.0742

500

0.161078

80.539

1000

0.15196

151.96

image of 预偏置双极性结型晶体管>DTA043ZEBTL
image of 预偏置双极性结型晶体管>DTA043ZEBTL
DTA043ZEBTL
Pre-Biased BJT Transistors
ROHM Semiconductor
DTA043ZEBTL dat
-
SC-89, SOT-490
NO
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Weight 29.993795mg
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 10
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F3
Output Voltage -70mV
Number of Elements 1
Polarity PNP
Element Configuration Single
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 150mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 250MHz
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
hFE Min 80
Resistor - Base (R1) 4.7 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47 k Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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