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  • image of 预偏置双极性结型晶体管>DTA113ZSATP
  • image of 预偏置双极性结型晶体管>DTA113ZSATP
DTA113ZSATP
DTA113ZSATP datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ROHM Semiconductor stock available at Utmel
DTA113ZSATP
Pre-Biased BJT Transistors
ROHM Semiconductor
DTA113ZSATP dat
-
SC-72 Formed Leads
YES
image of 预偏置双极性结型晶体管>DTA113ZSATP
image of 预偏置双极性结型晶体管>DTA113ZSATP
DTA113ZSATP
Pre-Biased BJT Transistors
ROHM Semiconductor
DTA113ZSATP dat
-
SC-72 Formed Leads
NO
TYPEDESCRIPTION
Mount Through Hole
Mounting Type Through Hole
Package / Case SC-72 Formed Leads
Transistor Element Material SILICON
Packaging Tape & Box (TB)
Published 1998
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 10
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Max Power Dissipation 300mW
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTA113
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Polarity PNP
Element Configuration Single
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Frequency - Transition 250MHz
hFE Min 33
Resistor - Base (R1) 1 k Ω
Resistor - Emitter Base (R2) 10 k Ω
VCEsat-Max 0.3 V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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