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  • image of 预偏置双极性结型晶体管>DTA115TM3T5G
  • image of 预偏置双极性结型晶体管>DTA115TM3T5G
DTA115TM3T5G
DTA115TM3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at Utmel
DTA115TM3T5G
Pre-Biased BJT Transistors
ON Semiconductor
DTA115TM3T5G da
-
SOT-723
YES
image of 预偏置双极性结型晶体管>DTA115TM3T5G
image of 预偏置双极性结型晶体管>DTA115TM3T5G
DTA115TM3T5G
Pre-Biased BJT Transistors
ON Semiconductor
DTA115TM3T5G da
-
SOT-723
NO
TYPEDESCRIPTION
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case SOT-723
Surface Mount YES
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR
Max Power Dissipation 260mW
Terminal Position DUAL
Terminal Form FLAT
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 160
Resistor - Base (R1) 100 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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