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  • image of 预偏置双极性结型晶体管>DTA143TMT2L
  • image of 预偏置双极性结型晶体管>DTA143TMT2L
DTA143TMT2L
DTA143TMT2L datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ROHM Semiconductor stock available at Utmel
DTA143TMT2L
Pre-Biased BJT Transistors
ROHM Semiconductor
DTA143TMT2L dat
-
SOT-723
YES
: 0.383693

1

0.383693

0.383693

10

0.361975

3.61975

100

0.341485

34.1485

500

0.322155

161.0775

1000

0.303921

303.921

image of 预偏置双极性结型晶体管>DTA143TMT2L
image of 预偏置双极性结型晶体管>DTA143TMT2L
DTA143TMT2L
Pre-Biased BJT Transistors
ROHM Semiconductor
DTA143TMT2L dat
-
SOT-723
NO
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTA143
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
hFE Min 100
Resistor - Base (R1) 4.7 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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