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  • image of 预偏置双极性结型晶体管>DTC014EEBTL
  • image of 预偏置双极性结型晶体管>DTC014EEBTL
DTC014EEBTL
DTC014EEBTL datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ROHM Semiconductor stock available at Utmel
DTC014EEBTL
Pre-Biased BJT Transistors
ROHM Semiconductor
DTC014EEBTL dat
-
SC-89, SOT-490
YES
: 0.191846

1

0.191846

0.191846

10

0.180987

1.80987

100

0.170742

17.0742

500

0.161078

80.539

1000

0.15196

151.96

image of 预偏置双极性结型晶体管>DTC014EEBTL
image of 预偏置双极性结型晶体管>DTC014EEBTL
DTC014EEBTL
Pre-Biased BJT Transistors
ROHM Semiconductor
DTC014EEBTL dat
-
SC-89, SOT-490
NO
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form FLAT
Output Voltage 50mV
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 150mV
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 250MHz
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 10 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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