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  • image of 预偏置双极性结型晶体管>DTC043TMT2L
  • image of 预偏置双极性结型晶体管>DTC043TMT2L
DTC043TMT2L
DTC043TMT2L datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ROHM Semiconductor stock available at Utmel
DTC043TMT2L
Pre-Biased BJT Transistors
ROHM Semiconductor
DTC043TMT2L dat
-
SOT-723
YES
: 0.242332

1

0.242332

0.242332

10

0.228615

2.28615

100

0.215675

21.5675

500

0.203467

101.7335

1000

0.191949

191.949

image of 预偏置双极性结型晶体管>DTC043TMT2L
image of 预偏置双极性结型晶体管>DTC043TMT2L
DTC043TMT2L
Pre-Biased BJT Transistors
ROHM Semiconductor
DTC043TMT2L dat
-
SOT-723
NO
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form FLAT
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 250MHz
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 5V
Resistor - Base (R1) 4.7 k Ω
Continuous Collector Current 100mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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