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  • image of 预偏置双极性结型晶体管>DTD114GKT146
  • image of 预偏置双极性结型晶体管>DTD114GKT146
DTD114GKT146
DTD114GKT146 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ROHM Semiconductor stock available at Utmel
DTD114GKT146
Pre-Biased BJT Transistors
ROHM Semiconductor
DTD114GKT146 da
-
TO-236-3, SC-59, SOT-23-3
YES
: 0.55752

1

0.55752

0.55752

10

0.525962

5.25962

100

0.496191

49.6191

500

0.468105

234.0525

1000

0.441608

441.608

image of 预偏置双极性结型晶体管>DTD114GKT146
image of 预偏置双极性结型晶体管>DTD114GKT146
DTD114GKT146
Pre-Biased BJT Transistors
ROHM Semiconductor
DTD114GKT146 da
-
TO-236-3, SC-59, SOT-23-3
NO
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR
HTS Code 8541.21.00.75
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTD114
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 200MHz
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) 5V
hFE Min 56
Continuous Collector Current 500mA
Resistor - Emitter Base (R2) 10 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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