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  • image of 预偏置双极性结型晶体管>NSVMMUN2232LT3G
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NSVMMUN2232LT3G
NSVMMUN2232LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at Utmel
NSVMMUN2232LT3G
Pre-Biased BJT Transistors
ON Semiconductor
NSVMMUN2232LT3G
-
TO-236-3, SC-59, SOT-23-3
YES
image of 预偏置双极性结型晶体管>NSVMMUN2232LT3G
image of 预偏置双极性结型晶体管>NSVMMUN2232LT3G
NSVMMUN2232LT3G
Pre-Biased BJT Transistors
ON Semiconductor
NSVMMUN2232LT3G
-
TO-236-3, SC-59, SOT-23-3
NO
TYPEDESCRIPTION
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 246mW
Pin Count 3
Number of Elements 1
Polarity NPN
Power - Max 246mW
Halogen Free Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 15
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 4.7 k Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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