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  • image of 预偏置双极性结型晶体管>PDTA144EU,115
  • image of 预偏置双极性结型晶体管>PDTA144EU,115
PDTA144EU,115
PDTA144EU,115 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Nexperia USA Inc. stock available at Utmel
PDTA144EU,115
Pre-Biased BJT Transistors
Nexperia USA Inc.
PDTA144EU,115 d
-
SC-70, SOT-323
YES
image of 预偏置双极性结型晶体管>PDTA144EU,115
image of 预偏置双极性结型晶体管>PDTA144EU,115
PDTA144EU,115
Pre-Biased BJT Transistors
Nexperia USA Inc.
PDTA144EU,115 d
-
SC-70, SOT-323
NO
TYPEDESCRIPTION
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.95
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number PDTA144
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Resistor - Base (R1) 47 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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