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  • image of 预偏置双极性结型晶体管>TDTA143E,LM
  • image of 预偏置双极性结型晶体管>TDTA143E,LM
TDTA143E,LM
TDTA143E,LM datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at Utmel
TDTA143E,LM
Pre-Biased BJT Transistors
Toshiba Semiconductor and Storage
TDTA143E,LM dat
-
TO-236-3, SC-59, SOT-23-3
YES
: 0.17

1

0.17

0.17

10

0.160377

1.60377

100

0.151299

15.1299

500

0.142735

71.3675

1000

0.134656

134.656

image of 预偏置双极性结型晶体管>TDTA143E,LM
image of 预偏置双极性结型晶体管>TDTA143E,LM
TDTA143E,LM
Pre-Biased BJT Transistors
Toshiba Semiconductor and Storage
TDTA143E,LM dat
-
TO-236-3, SC-59, SOT-23-3
NO
TYPEDESCRIPTION
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Mounting Style SMD/SMT
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Product Status Active
Transistor Polarity PNP
Channel Mode Enhancement
Manufacturer Toshiba
Brand Toshiba
Series -
Packaging Cut Tape
Subcategory Transistors
Configuration Single
Power - Max 320 mW
Product Type BJTs - Bipolar Transistors - Pre-Biased
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 100 mA
Frequency - Transition 250 MHz
Resistor - Base (R1) 4.7 kOhms
Continuous Collector Current 100 mA
Product Category Bipolar Transistors - Pre-Biased
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