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  • image of 金属氧化物半导体场效应晶体管阵列>CAS100H12AM1
  • image of 金属氧化物半导体场效应晶体管阵列>CAS100H12AM1
CAS100H12AM1
CAS100H12AM1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Cree/Wolfspeed stock available at Utmel
CAS100H12AM1
MOSFETs Transistors Arrays
Cree/Wolfspeed
CAS100H12AM1 da
-
Module
YES
image of 金属氧化物半导体场效应晶体管阵列>CAS100H12AM1
image of 金属氧化物半导体场效应晶体管阵列>CAS100H12AM1
CAS100H12AM1
MOSFETs Transistors Arrays
Cree/Wolfspeed
CAS100H12AM1 da
-
Module
NO
TYPEDESCRIPTION
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 3
Supplier Device Package Module
Packaging Bulk
Series Z-FET™
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Max Power Dissipation 568W
Number of Elements 2
Power Dissipation 568W
Power - Max 568W
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 20mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 3.1V @ 50mA
Input Capacitance (Ciss) (Max) @ Vds 9500pF @ 800V
Current - Continuous Drain (Id) @ 25°C 168A
Drain to Source Voltage (Vdss) 1200V 1.2kV
Continuous Drain Current (ID) 168A
Threshold Voltage 2.6V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 1.2kV
Input Capacitance 9.5nF
FET Feature Standard
Drain to Source Resistance 16mOhm
Rds On Max 20 mΩ
Nominal Vgs 3.1 V
REACH SVHC Unknown
Radiation Hardening No
RoHS Status Non-RoHS Compliant
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