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  • image of 射频金属氧化物半导体场效应晶体管>BLF8G22LS-270GVJ
  • image of 射频金属氧化物半导体场效应晶体管>BLF8G22LS-270GVJ
BLF8G22LS-270GVJ
BLF8G22LS-270GVJ datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon USA Inc. stock available at Utmel
BLF8G22LS-270GVJ
RF MOSFETs Transistors
Ampleon USA Inc.
BLF8G22LS-270GV
-
SOT-1244C
YES
: 464.364169

1

464.364169

464.364169

10

438.079405

4380.79405

100

413.282458

41328.2458

500

389.889111

194944.5555

1000

367.819916

367819.916

image of 射频金属氧化物半导体场效应晶体管>BLF8G22LS-270GVJ
image of 射频金属氧化物半导体场效应晶体管>BLF8G22LS-270GVJ
BLF8G22LS-270GVJ
RF MOSFETs Transistors
Ampleon USA Inc.
BLF8G22LS-270GV
-
SOT-1244C
NO
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Package / Case SOT-1244C
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Voltage - Rated 65V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Frequency 2.11GHz~2.17GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BLF8G22
Reference Standard IEC-60134
JESD-30 Code R-CDSO-G6
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 2.4A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 17.3dB
DS Breakdown Voltage-Min 65V
Power - Output 80W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
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