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  • image of 射频金属氧化物半导体场效应晶体管>IXZR16N60
  • image of 射频金属氧化物半导体场效应晶体管>IXZR16N60
IXZR16N60
IXZR16N60 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from IXYS-RF stock available at Utmel
IXZR16N60
射频金属氧化物半导体场效应晶体管
IXYS-RF
IXZR16N60 datas
-
TO-247-3
YES
image of 射频金属氧化物半导体场效应晶体管>IXZR16N60
image of 射频金属氧化物半导体场效应晶体管>IXZR16N60
IXZR16N60
射频金属氧化物半导体场效应晶体管
IXYS-RF
IXZR16N60 datas
-
TO-247-3
NO
TYPEDESCRIPTION
Factory Lead Time 10 Weeks
Package / Case TO-247-3
Surface Mount NO
Supplier Device Package PLUS247™-3
Number of Terminals 3
Transistor Element Material SILICON
Package Tube
Mfr IXYS-RF
Product Status Obsolete
Package Shape RECTANGULAR
Manufacturer IXYS Corporation
Packaging Tube
Series Z-MOS™
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Voltage - Rated 600V
Current Rating (Amps) 18A
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Current Rating 18A
Frequency 65MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Transistor Type N-Channel
Gain 23dB
Drain Current-Max (Abs) (ID) 18A
DS Breakdown Voltage-Min 600V
Power - Output 350W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 350W
Noise Figure --
Voltage - Test 100V
RoHS Status ROHS3 Compliant
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