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  • image of 单金属氧化物半导体场效应晶体管晶体管>2SK1399-T1B-A
  • image of 单金属氧化物半导体场效应晶体管晶体管>2SK1399-T1B-A
2SK1399-T1B-A
2SK1399-T1B-A
Single MOSFETs Transistors
Renesas
-
-
YES
: 0.062125

1

0.062125

0.062125

500

0.04568

22.84

1000

0.038067

38.067

2000

0.034924

69.848

5000

0.032639

163.195

10000

0.030362

303.62

15000

0.029363

440.445

50000

0.028873

1443.65

image of 单金属氧化物半导体场效应晶体管晶体管>2SK1399-T1B-A
image of 单金属氧化物半导体场效应晶体管晶体管>2SK1399-T1B-A
2SK1399-T1B-A
Single MOSFETs Transistors
Renesas
-
-
NO
TYPEDESCRIPTION
Factory Lead Time 1 Week
Surface Mount YES
Number of Terminals 3
Transistor Element Material SILICON
Package Bulk
Mfr Renesas Electronics America Inc
Product Status Active
Package Shape RECTANGULAR
Manufacturer Renesas Electronics Corporation
Series *
Pbfree Code Yes
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PDSO-G3
Brand Name Renesas
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 0.1 A
Drain-source On Resistance-Max 40 Ω
DS Breakdown Voltage-Min 50 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.2 W
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