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  • image of 单金属氧化物半导体场效应晶体管晶体管>2SK3594-01
  • image of 单金属氧化物半导体场效应晶体管晶体管>2SK3594-01
2SK3594-01
2SK3594-01
Single MOSFETs Transistors
Fuji Electric
-
-
YES
: 20.56656

1

20.56656

20.56656

10

19.402415

194.02415

100

18.304165

1830.4165

500

17.26808

8634.04

1000

16.290642

16290.642

image of 单金属氧化物半导体场效应晶体管晶体管>2SK3594-01
image of 单金属氧化物半导体场效应晶体管晶体管>2SK3594-01
2SK3594-01
Single MOSFETs Transistors
Fuji Electric
-
-
NO
TYPEDESCRIPTION
Surface Mount NO
Number of Terminals 3
Transistor Element Material SILICON
Package Shape RECTANGULAR
Manufacturer Fuji Electric Co Ltd
ECCN Code EAR99
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 30 A
Drain-source On Resistance-Max 0.066 Ω
Pulsed Drain Current-Max (IDM) 180 A
DS Breakdown Voltage-Min 200 V
Avalanche Energy Rating (Eas) 258.9 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 135 W
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