+86-13723477211
  • image of 单金属氧化物半导体场效应晶体管晶体管>AON6428
  • image of 单金属氧化物半导体场效应晶体管晶体管>AON6428
AON6428
N-Channel Tape & Reel (TR) 10m Ω @ 20A, 10V ±20V 770pF @ 15V 17.8nC @ 10V 30V 8-PowerSMD, Flat Leads
AON6428
Single MOSFETs Transistors
Alpha & Omega Semiconductor Inc.
N-Channel Tape
-
8-PowerSMD, Flat Leads
YES
: 0.14472

1

0.14472

0.14472

10

0.136528

1.36528

100

0.1288

12.88

500

0.121509

60.7545

1000

0.114632

114.632

image of 单金属氧化物半导体场效应晶体管晶体管>AON6428
image of 单金属氧化物半导体场效应晶体管晶体管>AON6428
AON6428
Single MOSFETs Transistors
Alpha & Omega Semiconductor Inc.
N-Channel Tape
-
8-PowerSMD, Flat Leads
NO
TYPEDESCRIPTION
Mounting Type Surface Mount
Package / Case 8-PowerSMD, Flat Leads
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Position DUAL
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta 30W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11A Ta 43A Tc
Gate Charge (Qg) (Max) @ Vgs 17.8nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 43A
Drain-source On Resistance-Max 0.0145Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 30V
RoHS Status Non-RoHS Compliant
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