TYPE | DESCRIPTION |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~155°C TJ |
Packaging | Tube |
Series | CoolMOS™ |
Published | 2008 |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSIP-T3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 28.4W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 28.4W |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.4 Ω @ 1.1A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 90μA |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 3.2A Tc |
Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
Rise Time | 7ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 20 ns |
Turn-Off Delay Time | 40 ns |
Continuous Drain Current (ID) | 3.2A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 600V |
Drain to Source Breakdown Voltage | 650V |
Pulsed Drain Current-Max (IDM) | 8A |
Avalanche Energy Rating (Eas) | 26 mJ |
FET Feature | Super Junction |
RoHS Status | Non-RoHS Compliant |
Orignal genuine | Each chip comes from the original factory |
| |
Main products | Only make original stock |
| |
Spot inventory | Only make original stock |
|
Original stock | Bom Distributio | Affordable Price |