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  • image of 单金属氧化物半导体场效应晶体管晶体管>TK2P60D(TE16L1,NQ)
  • image of 单金属氧化物半导体场效应晶体管晶体管>TK2P60D(TE16L1,NQ)
TK2P60D(TE16L1,NQ)
N-Channel Tape & Reel (TR) 4.3Ohm @ 1A, 10V ±30V 280pF @ 25V 7nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
TK2P60D(TE16L1,NQ)
Single MOSFETs Transistors
Toshiba Semiconductor and Storage
N-Channel Tape
-
TO-252-3, DPak (2 Leads + Tab), SC-63
YES
: 0.194877

1

0.194877

0.194877

10

0.183846

1.83846

100

0.17344

17.344

500

0.163623

81.8115

1000

0.154361

154.361

image of 单金属氧化物半导体场效应晶体管晶体管>TK2P60D(TE16L1,NQ)
image of 单金属氧化物半导体场效应晶体管晶体管>TK2P60D(TE16L1,NQ)
TK2P60D(TE16L1,NQ)
Single MOSFETs Transistors
Toshiba Semiconductor and Storage
N-Channel Tape
-
TO-252-3, DPak (2 Leads + Tab), SC-63
NO
TYPEDESCRIPTION
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PW-MOLD
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series π-MOSVII
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Number of Elements 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Power Dissipation 60W
Turn On Delay Time 35 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 280pF
Rds On Max 4.3 Ω
Height 2.3mm
Length 6.5mm
Width 5.5mm
Radiation Hardening No
RoHS Status RoHS Compliant
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